Technische Details IRF7463PBF IR
Description: MOSFET N-CH 30V 14A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V.
Weitere Produktangebote IRF7463PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7463PBF | Hersteller : IR |
 |
auf Bestellung 3990 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
IRF7463PBF Produktcode: 79754 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: SMPS MOSFET, Vdss=30V,Rds=8mOhm,Id=14A Idd,A: 14A A Rds(on), Ohm: -40...85 JHGF: SMD |
Produkt ist nicht verfügbar
|
|
 |
IRF7463PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V |
Produkt ist nicht verfügbar |