Technische Details IRF7463PBF IR
Description: MOSFET N-CH 30V 14A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Weitere Produktangebote IRF7463PBF nach Preis ab 1.13 EUR bis 1.26 EUR
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IRF7463PBF Produktcode: 79754
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Lieblingsprodukt
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IR |
 Transistoren > MOSFET N-CHGehäuse: SO-8 Uds,V: SMPS MOSFET, Vdss=30V,Rds=8mOhm,Id=14A Idd,A: 14A A Rds(on), Ohm: -40...85 JHGF: SMD |
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IRF7463PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7463PBF Produktcode: 79754
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: SMPS MOSFET, Vdss=30V,Rds=8mOhm,Id=14A
Idd,A: 14A A
Rds(on), Ohm: -40...85
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: SMPS MOSFET, Vdss=30V,Rds=8mOhm,Id=14A
Idd,A: 14A A
Rds(on), Ohm: -40...85
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 1.26 EUR |
| 10+ | 1.13 EUR |
| IRF7463PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH