Produkte > INFINEON TECHNOLOGIES > IRF7473TRPBF
IRF7473TRPBF

IRF7473TRPBF Infineon Technologies

Infineon_IRF7473_DataSheet_v01_01_EN-3363083.pdf
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 6.9A 26mOhm 61nC
auf Bestellung 3962 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.64 EUR
10+2.16 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.1 EUR
2000+1.02 EUR
4000+0.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRF7473TRPBF Infineon Technologies

Description: MOSFET N-CH 100V 6.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V.

Weitere Produktangebote IRF7473TRPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRF7473TRPBF International Rectifier irf7473.pdf description SO8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF International Rectifier/Infineon Infineon-IRF7473-DataSheet-v01_01-EN.pdf description N-канальний ПТ, Udss, В = 100, Id = 6,9 А, Ciss, пФ @ Uds, В = 3180, Qg, нКл = 61, Rds = 26 мОм, Ugs(th) = 5,5, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOIC-8 Од. вим: шт
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF IRF7473TRPBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 description Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF IRF7473TRPBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 description Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF description irf7473.pdf
Hersteller: International Rectifier
SO8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF description Infineon-IRF7473-DataSheet-v01_01-EN.pdf
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 100, Id = 6,9 А, Ciss, пФ @ Uds, В = 3180, Qg, нКл = 61, Rds = 26 мОм, Ugs(th) = 5,5, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOIC-8 Од. вим: шт
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF description irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF description irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH