IRF7490PBF Infineon Technologies

Description: MOSFET N-CH 100V 5.4A 8SO, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA.