Technische Details IRF7492 IR
Description: MOSFET N-CH 200V 3.7A 8SO, Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta).
Weitere Produktangebote IRF7492
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF7492 | Infineon Technologies |
 Description: MOSFET N-CH 200V 3.7A 8SORds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7492 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET N-CH 200V 3.7A 8SO
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH