IRF7492PBF

Hersteller: Infineon
MOSFET N-CH 200V 3.7A 8SO Транзистори

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 200, Id = 3,7 A, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 1820 @ 25, Qg, нКл = 59 @ 10 В, Rds = 79 мОм @ 2,2 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2,5 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V

Hersteller: Infineon Technologies
MOSFETs 200V 1 N-CH HEXFET 79mOhms 39nC