IRF7492PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
N-канальний ПТ; Udss, В = 200; Id = 3,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1820 @ 25; Qg, нКл = 59 @ 10 В; Rds = 79 мОм @ 2,2 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,5 В @ 250 мкА; SOICN-8
N-канальний ПТ; Udss, В = 200; Id = 3,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1820 @ 25; Qg, нКл = 59 @ 10 В; Rds = 79 мОм @ 2,2 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,5 В @ 250 мкА; SOICN-8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 3.36 EUR |
10+ | 1.18 EUR |
100+ | 1.04 EUR |
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Technische Details IRF7492PBF International Rectifier/Infineon
Description: MOSFET N-CH 200V 3.7A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V.
Weitere Produktangebote IRF7492PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF7492PBF Produktcode: 26534 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 200 Idd,A: 03.07.2015 Rds(on), Ohm: 0.079 Ciss, pF/Qg, nC: 1820/39 JHGF: SMD |
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IRF7492PBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC |
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IRF7492PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 3.7A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7492PBF | Hersteller : Infineon / IR | MOSFET 200V 1 N-CH HEXFET 79mOhms 39nC |
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