Technische Details IRF7495PBF
- MOSFET, N, SO-8
- Transistor Type:MOSFET
- Max Voltage Vds:100V
- On State Resistance:0.022ohm
- Max Voltage Vgs:20V
- Transistor Case Style:SOIC
- Case Style:SOIC
- Cont Current Id:7.3A
- Fall Time Tf:36ns
- No. of Transistors:1
- Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D
- Power Dissipation Pd:2.5W
- Pulse Current Idm:58A
- Rise Time:13ns
- Termination Type:SMD
- Transistor Polarity:N
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRF7495PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7495PBF | Hersteller : International Rectifier/Infineon |
 N-канальний ПТ, Udss, В = 100, Id = 7,3, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 1530pF @ 25V, Qg, нКл = 51, Rds = 22 mOhm @ 4.4A, 10V, Tексп, °C = -55...+150, Ugs(th) = ±20V,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: штAnzahl je Verpackung: 95 Stücke |
verfügbar 26 Stücke: |
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| IRF7495PBF | Hersteller : International Rectifier |
MOSFET N-CH 100V 7.3A 8-SOIC Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRF7495PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 7.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7495PBF | Hersteller : Infineon Technologies |
MOSFETs 20V N-CH HEXFET 22mOhms 34nC |
Produkt ist nicht verfügbar |