| Anzahl | Preis |
|---|---|
| 2+ | 1.57 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7501TRPBF Infineon / IR
Description: MOSFET 2N-CH 20V 2.4A MICRO8, Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7501TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF7501TRPBF | International Rectifier |
 MOSFET N-CH DUAL 20V 2.4A MICRO8 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7501TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 2.4A MICRO8 Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
IRF7501TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 2.4A MICRO8 Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7501TRPBF |
|
Hersteller: International Rectifier
MOSFET N-CH DUAL 20V 2.4A MICRO8 Транзистори
MOSFET N-CH DUAL 20V 2.4A MICRO8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7501TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.4A MICRO8
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 2.4A MICRO8
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7501TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.4A MICRO8
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 2.4A MICRO8
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH