IRF7503TR International Rectifier
Hersteller: International Rectifier
Transistor 2xN-Channel MOSFET; 30V; 20V; 222mOhm; 2,4A; 1,25W; -55°C ~ 150°C; IRF7503 TIRF7503
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.8 EUR |
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Technische Details IRF7503TR International Rectifier
Description: MOSFET 2N-CH 30V 2.4A MICRO8, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Cut Tape (CT), Part Status: Obsolete, Supplier Device Package: Micro8™.
Weitere Produktangebote IRF7503TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF7503TR | Infineon Technologies |
Description: MOSFET 2N-CH 30V 2.4A MICRO8 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: Micro8™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7503TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: Micro8™
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: Micro8™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH