IRF7507TR
Hersteller: IRТранз. Пол. ММ N&P-HEXFET logik MICRO8 Udss=(20; -20)V; Id=(2,4; -1,7)A; Pdmax=1,25W; Rds=(0,135; 0,27) Ohm
auf Bestellung 3038 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.93 EUR |
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Technische Details IRF7507TR IR
Description: MOSFET N/P-CH 20V MICRO8, Packaging: Cut Tape (CT), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V, Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Weitere Produktangebote IRF7507TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF7507TR |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7507TR |
MSOP8 |
auf Bestellung 953 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7507TR | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 20V MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
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