IRF7509TRPBF
Produktcode: 32320
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Lieblingsprodukt
Hersteller: IR
Gehäuse: Micro-8
Uds,V: 30
Idd,A: 2.7; -2
Rds(on), Ohm: 0.11; 0,2
Bem.: N and P channel
JHGF: SMD
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Weitere Produktangebote IRF7509TRPBF nach Preis ab 0.5 EUR bis 1.44 EUR
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IRF7509TRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT DUAL N/PCh 30V 2.4A Micro 8 |
auf Bestellung 6954 Stücke: Lieferzeit 136-140 Tag (e) |
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| IRF7509TRPBF | Hersteller : International Rectifier/Infineon |
Транзистор польовий N+P, Udss, В = 30, Id = 2,7 A, Ptot, Вт = 1,25, Тип монт. = smd, Ciss, пФ @ Uds, В = 210 @ 25, Qg, нКл = 12 @ 10 В, Rds = 110 мОм @ 1,7 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1 В @ 250 мкА, td(on)+tr = 9,7 нс, td(off)+tf = 19 нс, Anzahl je Verpackung: 4000 Stücke |
verfügbar 1 Stücke: |
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| IRF7509TRPBF | Hersteller : International Rectifier |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRF7509TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 2.7A/2A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 110mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Active |
Produkt ist nicht verfügbar |
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IRF7509TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 2.7A/2A MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 110mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Active |
Produkt ist nicht verfügbar |