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IRF7601TRPBF

IRF7601TRPBF Infineon / IR


Infineon_IRF7601_DataSheet_v01_01_EN-1228231.pdf Hersteller: Infineon / IR
MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8
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Technische Details IRF7601TRPBF Infineon / IR

Description: MOSFET N-CH 20V 5.7A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: Micro8™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.

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IRF7601TRPBF IRF7601TRPBF Hersteller : Infineon Technologies irf7601.pdf Trans MOSFET N-CH Si 20V 5.7A 8-Pin Micro T/R
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IRF7601TRPBF IRF7601TRPBF Hersteller : INFINEON TECHNOLOGIES irf7601pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7601TRPBF IRF7601TRPBF Hersteller : Infineon Technologies irf7601pbf.pdf?fileId=5546d462533600a4015356038df01c74 Description: MOSFET N-CH 20V 5.7A MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
IRF7601TRPBF IRF7601TRPBF Hersteller : INFINEON TECHNOLOGIES irf7601pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar