IRF7606TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.54 EUR |
| 2000+ | 0.52 EUR |
| 4000+ | 0.48 EUR |
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Technische Details IRF7606TRPBF Infineon Technologies
Description: MOSFET P-CH 30V 3.6A MICRO8, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7606TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF7606TRPBF | Infineon Technologies |
 Description: MOSFET P-CH 30V 3.6A MICRO8Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7606TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 3.6A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7606TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3.6A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7606TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A MICRO8
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Description: MOSFET P-CH 30V 3.6A MICRO8
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH