Technische Details IRF7663TR IR
Description: MOSFET P-CH 20V 8.2A MICRO8, Packaging: Cut Tape (CT), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V.
Weitere Produktangebote IRF7663TR
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IRF7663TR | Hersteller : Infineon Technologies |
 Description: MOSFET P-CH 20V 8.2A MICRO8Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V |
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