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Technische Details IRF7739L2TRPBF Infineon / IR
Description: MOSFET N-CH 40V 46A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V.
Weitere Produktangebote IRF7739L2TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRF7739L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 46A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF7739L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7739L2TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IRF7739L2TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7739L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7739L2TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7739L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7739L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH




