Technische Details IRF7756 IR
Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP, Packaging: Tube, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-TSSOP.
Weitere Produktangebote IRF7756
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7756 | Hersteller : IR |
 TSSOP-8 |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7756 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-TSSOP |
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