Technische Details IRF7757TRPBF Infineon / IR
Description: MOSFET 2N-CH 20V 4.8A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Obsolete.
Weitere Produktangebote IRF7757TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7757TRPBF | Hersteller : IOR |
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auf Bestellung 37500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7757TRPBF | Hersteller : IOR |
07+ |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7757TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 4.8A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Obsolete |
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