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IRF7769L2TRPBF Infineon / IR


irf7769l2pbf-1302914.pdf
Hersteller: Infineon / IR
MOSFET 100V 1 N-CH HEXFET DIRECTFET L8
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Technische Details IRF7769L2TRPBF Infineon / IR

Description: MOSFET N-CH 100V 375A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DirectFET™ Isometric L8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V, Current - Continuous Drain (Id) @ 25°C: 375A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric L8, Packaging: Tape & Reel (TR).

Weitere Produktangebote IRF7769L2TRPBF

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IRF7769L2TRPBF IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF IRF7769L2PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF IRF7769L2PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF IRF7769L2PbF.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L2TRPBF IRF7769L2PbF.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH