IRF7807VPBF International Rectifier
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Technische Details IRF7807VPBF International Rectifier
Description: MOSFET N-CH 30V 8.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V.
Weitere Produktangebote IRF7807VPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF7807VPBF | Hersteller : International Rectifier/Infineon |
 N-канальний ПТ, Udss, В = 30, Id = 8,3 А, Ptot, Вт = 2,5, Тип монт. = smd, Qg, нКл = 14 @ 5 В, Rds = 25 мОм @ 7 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: штAnzahl je Verpackung: 95 Stücke |
Produkt ist nicht verfügbar |
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IRF7807VPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 8.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V |
Produkt ist nicht verfügbar |
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IRF7807VPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC |
Produkt ist nicht verfügbar |