IRF7821TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 1.7 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.74 EUR |
| 2000+ | 0.7 EUR |
| 4000+ | 0.68 EUR |
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Technische Details IRF7821TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V.
Weitere Produktangebote IRF7821TRPBF nach Preis ab 0.67 EUR bis 2.41 EUR
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IRF7821TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 13.6A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2381 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF7821TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 12+ | 1.53 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| 2000+ | 0.67 EUR |