IRF7821TRPBF Infineon Technologies
auf Bestellung 17241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 205+ | 0.72 EUR |
| 240+ | 0.60 EUR |
| 252+ | 0.55 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 4000+ | 0.37 EUR |
| 16000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7821TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V.
Weitere Produktangebote IRF7821TRPBF nach Preis ab 0.40 EUR bis 2.41 EUR
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IRF7821TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R |
auf Bestellung 1553 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7821TRPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC |
auf Bestellung 22348 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7821TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R |
auf Bestellung 1553 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7821TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 13.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V |
auf Bestellung 2381 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7821TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF7821TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF7821TRPBF - MOSFET, N-KANAL, 30V, 13.6A, SOIC tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF7821TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF7821TRPBF - MOSFET, N-KANAL, 30V, 13.6A, SOIC tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7821TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7821TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 13.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF7821TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W |
Produkt ist nicht verfügbar |