Technische Details IRF7831TRPBF
- MOSFET
- Transistor Polarity:N Channel
- Continuous Drain Current, Id:21A
- Drain Source Voltage, Vds:30V
- On Resistance, Rds(on):4.4mohm
- Rds(on) Test Voltage, Vgs:12V
- Power Dissipation, Pd:2.5W
- No. of Pins:8
Weitere Produktangebote IRF7831TRPBF nach Preis ab 0.78 EUR bis 2.48 EUR
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IRF7831TRPBF | Hersteller : Infineon Technologies |
 MOSFETs MOSFT 30V 21A 3.6mOhm 40nC |
auf Bestellung 923 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF7831TRPBF | Hersteller : International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 30, Id = 21 А, Ciss, пФ @ Uds, В = 6240 @ 15, Qg, нКл = 60 @ 4,5 В, Rds = 3,6 мОм @ 20 A, 10 В, Ugs(th) = 2,35 @ 250 мкА, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: Anzahl je Verpackung: 4000 Stücke |
verfügbar 1 Stücke: |
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| IRF7831TRPBF | Hersteller : International Rectifier |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRF7831TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 21A 8SO Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IRF7831TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 21A 8SO Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 15 V |
Produkt ist nicht verfügbar |