IRF7855PBF International Rectifier/Infineon
Hersteller: International Rectifier/InfineonN-канальний ПТ; Udss, В = 60; Id = 12; Ciss, пФ @ Uds, В = 1560 @ 25; Qg, нКл = 26; Р, Вт = 2,5 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRF7855PBF International Rectifier/Infineon
Description: MOSFET N-CH 60V 12A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V.
Weitere Produktangebote IRF7855PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF7855PBF | Hersteller : International Rectifier Corporation |
MOSFET N-CH 100V 8.3A SOIC-8 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7855PBF(Transistor) Produktcode: 49589
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Lieblingsprodukt
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Hersteller : Infineon |
Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 12 А Rds(on), Ohm: 9,4 mOhm Ciss, pF/Qg, nC: 1560/26 JHGF: SMD |
Produkt ist nicht verfügbar
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IRF7855PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 12A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7855PBF | Hersteller : Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC |
Produkt ist nicht verfügbar |