IRF7855TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 12A 8SO
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
| Anzahl | Preis |
|---|---|
| 4000+ | 1 EUR |
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Technische Details IRF7855TRPBF Infineon Technologies
Description: MOSFET N-CH 60V 12A 8SO, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4.9V @ 100µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10.
Weitere Produktangebote IRF7855TRPBF nach Preis ab 0.95 EUR bis 3.41 EUR
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IRF7855TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 12A 8SO Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4.9V @ 100µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
auf Bestellung 8296 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7855TRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 60V 12A 9.4mOhm 26nC Qg |
auf Bestellung 25913 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7855TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF7855TRPBF - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 9400 µohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.9V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 9400µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 14744 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7855TRPBF | Hersteller : International Rectifier |
MOSFET N-CH 60V 12A 8-SOIC Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRF7855TRPBF | Hersteller : International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 60, Id = 12, Ciss, пФ @ Uds, В = 1560, Qg, нКл = 26, Р, Вт = 2,5, Тексп, °C = -55///+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOIC-8 Од. вим: шт Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7855TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |