IRF8010STRLPBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.92 EUR |
| 1600+ | 1.75 EUR |
| 2400+ | 1.69 EUR |
| 4000+ | 1.62 EUR |
| 5600+ | 1.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF8010STRLPBF Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V.
Weitere Produktangebote IRF8010STRLPBF nach Preis ab 1.46 EUR bis 7.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRF8010STRLPBF | Infineon Technologies |
 Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8010STRLPBF | Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
auf Bestellung 819 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8010STRLPBF | Infineon Technologies |
MOSFETs MOSFT 100V 80A 15mOhm 81nC |
auf Bestellung 856 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF8010STRLPBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF8010STRLPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.92 EUR |
| 1600+ | 1.71 EUR |
| 2400+ | 1.63 EUR |
| 4000+ | 1.54 EUR |
| 5600+ | 1.46 EUR |
| IRF8010STRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.24 EUR |
| IRF8010STRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.38 EUR |
| 47+ | 3.64 EUR |
| 100+ | 2.18 EUR |
| IRF8010STRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.38 EUR |
| 47+ | 3.72 EUR |
| 100+ | 2.26 EUR |
| IRF8010STRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
auf Bestellung 819 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.41 EUR |
| 10+ | 4.18 EUR |
| 100+ | 2.9 EUR |
| IRF8010STRLPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 80A 15mOhm 81nC
MOSFETs MOSFT 100V 80A 15mOhm 81nC
auf Bestellung 856 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.35 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.33 EUR |
| 800+ | 2.39 EUR |
| IRF8010STRLPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 215+ | 3.08 EUR |
| 500+ | 2.74 EUR |