IRF8010STRLPBF Infineon Technologies
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.34 EUR |
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Technische Details IRF8010STRLPBF Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V.
Weitere Produktangebote IRF8010STRLPBF nach Preis ab 1.34 EUR bis 4.19 EUR
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 100V 80A 15mOhm 81nC |
auf Bestellung 1090 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
auf Bestellung 1759 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF8010STRLPBF | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8010STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF8010STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF8010STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |