IRF8302MTRPBF Infineon Technologies


infineonirf8302mdatasheetv0101en.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R
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Technische Details IRF8302MTRPBF Infineon Technologies

Description: MOSFET N-CH 30V 31A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V.

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IRF8302MTRPBF IRF8302MTRPBF Infineon Technologies irf8302mpbf.pdf?fileId=5546d462533600a40153560d16e41d5b Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
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IRF8302MTRPBF IRF8302MTRPBF Infineon Technologies Infineon_IRF8302M_DataSheet_v01_01_EN-3363059.pdf MOSFETs 30V N-Channel HEXFET Power MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH
IRF8302MTRPBF irf8302mpbf.pdf?fileId=5546d462533600a40153560d16e41d5b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8302MTRPBF Infineon_IRF8302M_DataSheet_v01_01_EN-3363059.pdf
Hersteller: Infineon Technologies
MOSFETs 30V N-Channel HEXFET Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH