IRF830BPBF-BE3 Vishay / Siliconix
auf Bestellung 2642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.00 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.72 EUR |
| 5000+ | 0.70 EUR |
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Technische Details IRF830BPBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V.
Weitere Produktangebote IRF830BPBF-BE3 nach Preis ab 2.55 EUR bis 2.55 EUR
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IRF830BPBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 5.3A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF830BPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220-1 |
Produkt ist nicht verfügbar |