auf Bestellung 2130 Stücke:
Lieferzeit 434-448 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.58 EUR |
| 13+ | 4.11 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.65 EUR |
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Technische Details IRF8327STRPBF Infineon / IR
Description: MOSFET N-CH 30V 14A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: DIRECTFET™ SQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V.
Weitere Produktangebote IRF8327STRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF8327STRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R |
Produkt ist nicht verfügbar |
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IRF8327STRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 14A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: DIRECTFET™ SQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V |
Produkt ist nicht verfügbar |