IRF8513PBF
Produktcode: 26536
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: IR
Gehäuse: SO-8
Uds,V: 30
Idd,A: 08.11.2015
Rds(on), Ohm: 0.0155
Ciss, pF/Qg, nC: 07.05.766
Bem.: 2N Halbbrucke
JHGF: SMD
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IRF8513PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRF8513PBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A/11A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A, 11A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W, 2.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF8513PBF | Infineon / IR |
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF8513PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A/11A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W, 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET 2N-CH 30V 8A/11A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W, 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8513PBF |
|
Hersteller: Infineon / IR
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH