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IRF8707PBF Vishay/IR


irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Hersteller: Vishay/IR

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Technische Details IRF8707PBF Vishay/IR

Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V.

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IRF8707PBF IRF8707PBF
Produktcode: 39735
Hersteller : IR irf8707pbf-datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30 V
Idd,A: 11 A
Rds(on), Ohm: 0,01 Ohm
Ciss, pF/Qg, nC: 760/6,2
JHGF: SMD
Produkt ist nicht verfügbar
IRF8707PBF IRF8707PBF Hersteller : Infineon Technologies irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
IRF8707PBF IRF8707PBF Hersteller : Infineon Technologies Infineon_IRF8707_DataSheet_v01_01_EN-1732665.pdf MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
Produkt ist nicht verfügbar
IRF8707PBF IRF8707PBF Hersteller : Infineon (IRF) irf8707pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar