IRF8707PBF
Produktcode: 39735
Hersteller: IRGehäuse: SO-8
Uds,V: 30 V
Idd,A: 11 A
Rds(on), Ohm: 0,01 Ohm
Ciss, pF/Qg, nC: 760/6,2
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 0.28 EUR |
| 10+ | 0.24 EUR |
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Technische Details IRF8707PBF IR
- MOSFET, N SO-8
- Transistor Polarity:N
- Max Voltage Vds:30V
- On State Resistance:0.0119ohm
- Transistor Case Style:SO
- Case Style:SO-8 (SOIC-8)
- Cont Current Id:11A
- Power Dissipation Pd:2.5W
- Pulse Current Idm:88A
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Charge Qrr @ Tj = 25`C:6.2nC
- Typ Voltage Vds:30V
- Typ Voltage Vgs th:1.8V
- Voltage Vds:30V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRF8707PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRF8707PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF8707PBF | Hersteller : Infineon Technologies |
MOSFETs 30V SINGLE N-CH 11.9mOhms 6.2nC |
Produkt ist nicht verfügbar |