Technische Details IRF8736PBF
- MOSFET, N SO-8
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:18A
- On State Resistance:0.0048ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:1.8V
- Case Style:SOIC
- Termination Type:SMD
- Max Voltage Vds:30V
- Power Dissipation Pd:2.5W
- Pulse Current Idm:144A
- Typ Charge Qrr @ Tj = 25`C:17nC
- Voltage Vds:30V
- Transistor Case Style:SOIC
Weitere Produktangebote IRF8736PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRF8736PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 18A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
IRF8736PBF | Hersteller : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC |
Produkt ist nicht verfügbar |