Technische Details IRF8915PBF Infineon / IR
Description: HEXFET POWER MOSFET, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8.9A, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V, Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF8915PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF8915PBF | Hersteller : IOR |
 0748+ |
auf Bestellung 666 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF8915PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N |
Produkt ist nicht verfügbar |
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| IRF8915PBF | Hersteller : International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |