Technische Details IRF9510STRRPBF Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: -100V, Pulsed drain current: -16A, Drain current: -4A, Gate charge: 8.7nC, On-state resistance: 1.2Ω, Gate-source voltage: ±20V, Power dissipation: 43W, Case: D2PAK; TO263, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote IRF9510STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF9510STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Mounting: SMD Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -16A Drain current: -4A Gate charge: 8.7nC On-state resistance: 1.2Ω Gate-source voltage: ±20V Power dissipation: 43W Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF9510STRRPBF | Hersteller : Vishay / Siliconix | MOSFETs P-Chan 100V 4.0 Amp |
Produkt ist nicht verfügbar |
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| IRF9510STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Mounting: SMD Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -16A Drain current: -4A Gate charge: 8.7nC On-state resistance: 1.2Ω Gate-source voltage: ±20V Power dissipation: 43W Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape |
Produkt ist nicht verfügbar |