Technische Details IRF9510STRRPBF Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -4A, Pulsed drain current: -16A, Power dissipation: 43W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: SMD, Gate charge: 8.7nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote IRF9510STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF9510STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF9510STRRPBF | Hersteller : Vishay / Siliconix | MOSFETs P-Chan 100V 4.0 Amp |
Produkt ist nicht verfügbar |
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| IRF9510STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |