IRF9610STRRPBF Vishay / Siliconix
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.72 EUR |
| 800+ | 0.60 EUR |
| 2400+ | 0.57 EUR |
| 4800+ | 0.56 EUR |
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Technische Details IRF9610STRRPBF Vishay / Siliconix
Description: N-CHANNEL200V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V, Power Dissipation (Max): 3W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRF9610STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IRF9610STRRPBF | Hersteller : Vishay |
 Trans MOSFET P-CH 200V 1.8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF9610STRRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF9610STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF9610STRRPBF | Hersteller : Vishay Siliconix |
Description: N-CHANNEL200V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF9610STRRPBF | Hersteller : Vishay Siliconix |
Description: N-CHANNEL200V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF9610STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |