IRF9622

IRF9622 Harris Corporation


HRISD017-5-80.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1128 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
683+1.06 EUR
Mindestbestellmenge: 683
Produktrezensionen
Produktbewertung abgeben

Technische Details IRF9622 Harris Corporation

Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Weitere Produktangebote IRF9622

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRF9622 IRF9622
Produktcode: 30496
Hersteller : IR IRF9622.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 3
Rds(on),Om: 2.4
Ciss, pF/Qg, nC: 350/16
/: THT
Produkt ist nicht verfügbar