IRF9640S
Produktcode: 22419
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Lieblingsprodukt
Hersteller: IR
Gehäuse: SMD-220
Uds,V: 200
Id,A: 11
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1200/44
Produktrezensionen
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Technische Details IRF9640S IR
- MOSFET, P D2-PAK
- Transistor Type:MOSFET
- Transistor Polarity:P
- Cont Current Id:11A
- On State Resistance:0.5ohm
- Case Style:TO-263
- Termination Type:SMD
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Voltage Vds:200V
- Max Voltage Vgs th:-4V
- Power Dissipation:125W
- Power Dissipation Pd:125W
- Power Dissipation on 1 Sq. PCB:3W
- Pulse Current Idm:44A
- SMD Marking:IRF9640S
- Voltage Vds:200V
- Transistor Case Style:TO-263
Weitere Produktangebote IRF9640S nach Preis ab 2.36 EUR bis 2.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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IRF9640S | Hersteller : Siliconix |
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640S | Hersteller : Siliconix |
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640S | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IRF9640S | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRF9 |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : VISHAY |
Description: VISHAY - IRF9640SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 11 A, 0.5 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: Lead (07-Nov-2024) |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay Semiconductors |
MOSFETs P-Chan 200V 11 Amp |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |