Technische Details IRF9910 IOR
Description: MOSFET 2N-CH 20V 10A/12A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, 12A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.55V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF9910
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF9910 | Hersteller : IR |
 |
auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF9910 | Hersteller : IR |
05+ SOP-8; |
auf Bestellung 276 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF9910 | Hersteller : IR |
07+ SO-8 |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF9910 | Hersteller : IR |
SO-8 |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF9910 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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