IRF9910TR International Rectifier
Hersteller: International Rectifier
2N-MOSFET 20V 10A IRF9910 TIRF9910
Anzahl je Verpackung: 100 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 2.56 EUR |
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Technische Details IRF9910TR International Rectifier
Description: MOSFET 2N-CH 20V 10A/12A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.55V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10A, 12A, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF9910TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IRF9910TR | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.55V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF9910TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.55V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.55V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH