Technische Details IRF9952TR IOR
Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF9952TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF9952TR | Hersteller : IR |
 04+ |
auf Bestellung 1300 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF9952TR | Hersteller : IRF |
04+ SOP8 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF9952TR | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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