| Anzahl | Preis |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
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Technische Details IRF9953TRPBF Infineon / IR
Description: MOSFET 2P-CH 30V 2.3A 8SO, Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V.
Weitere Produktangebote IRF9953TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF9953TRPBF | International Rectifier |
 HEX/MOS P-CH DUAL 30V 2.3A 8SOIC Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF9953TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 2.3A 8SO Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
IRF9953TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 2.3A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF9953TRPBF |
|
Hersteller: International Rectifier
HEX/MOS P-CH DUAL 30V 2.3A 8SOIC Транзистори
HEX/MOS P-CH DUAL 30V 2.3A 8SOIC Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9953TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A 8SO
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Description: MOSFET 2P-CH 30V 2.3A 8SO
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9953TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 2.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH