auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.78 EUR |
| 250+ | 1.52 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.28 EUR |
| 2000+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF9Z14LPBF Vishay / Siliconix
Description: MOSFET P-CH 60V 6.7A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IRF9Z14LPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRF9Z14LPBF | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 60V 6.7A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar |