Technische Details IRF9Z14SPBF Vishay
Description: MOSFET P-CH 60V 6.7A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IRF9Z14SPBF nach Preis ab 0.57 EUR bis 4.88 EUR
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IRF9Z14SPBF | Vishay |
 Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z14SPBF | Vishay Semiconductors |
MOSFETs TO263 P-CH 60V 6.7A |
auf Bestellung 614 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z14SPBF | Vishay Siliconix |
Description: MOSFET P-CH 60V 6.7A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF9Z14SPBF |
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Hersteller: Vishay
Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK
Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 282+ | 0.61 EUR |
| 285+ | 0.58 EUR |
| 500+ | 0.57 EUR |
| IRF9Z14SPBF |
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Hersteller: Vishay Semiconductors
MOSFETs TO263 P-CH 60V 6.7A
MOSFETs TO263 P-CH 60V 6.7A
auf Bestellung 614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.41 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.33 EUR |
| 5000+ | 1.32 EUR |
| IRF9Z14SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET P-CH 60V 6.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.14 EUR |
| 50+ | 2.39 EUR |
| 100+ | 2.15 EUR |