auf Bestellung 1632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.62 EUR |
10+ | 1.95 EUR |
100+ | 1.69 EUR |
250+ | 1.65 EUR |
500+ | 1.49 EUR |
1000+ | 1.29 EUR |
2000+ | 1.22 EUR |
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Technische Details IRF9Z24PBF-BE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V.
Weitere Produktangebote IRF9Z24PBF-BE3 nach Preis ab 1.72 EUR bis 3.06 EUR
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IRF9Z24PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z24PBF-BE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 11A |
Produkt ist nicht verfügbar |