IRF9Z34NSTRRPBF Infineon Technologies
auf Bestellung 119000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 455+ | 1.19 EUR |
| 506+ | 1.03 EUR |
| 1000+ | 0.92 EUR |
| 10000+ | 0.79 EUR |
| 100000+ | 0.63 EUR |
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Technische Details IRF9Z34NSTRRPBF Infineon Technologies
Description: MOSFET P-CH 55V 19A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote IRF9Z34NSTRRPBF nach Preis ab 0.84 EUR bis 2.13 EUR
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IRF9Z34NSTRRPBF | Hersteller : Infineon Technologies |
 MOSFETs 1 P-CH -55V HEXFET 100mOhms 23.3nC |
auf Bestellung 515 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF9Z34NSTRRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF9Z34NSTRRPBF - IRF9Z34 20V-250V P-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 124000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z34NSTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R |
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IRF9Z34NSTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 19A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF9Z34NSTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 19A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |