IRFAC50 International Rectifier


IRSDD005-282.pdf?t.download=true&u=5oefqw
Hersteller: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
Drain to Source Voltage (Vdss): 600 V
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
Power Dissipation (Max): 150W
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 10.6A
FET Type: N-Channel
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Technische Details IRFAC50 International Rectifier

Description: N-CHANNEL HERMETIC MOS HEXFET, Drain to Source Voltage (Vdss): 600 V, Part Status: Active, Supplier Device Package: TO-204AA (TO-3), Power Dissipation (Max): 150W, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk, Current - Continuous Drain (Id) @ 25°C: 10.6A, FET Type: N-Channel.