Weitere Produktangebote IRFB11N50APBF nach Preis ab 1.56 EUR bis 15.6 EUR
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IRFB11N50APBF | Vishay |
 Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF | Vishay |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF | Vishay |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF | Vishay Semiconductors |
MOSFETs TO220 500V 11A N-CH MOSFET |
auf Bestellung 670 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB11N50APBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V |
auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB11N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
auf Bestellung 507 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF | Vishay |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFB11N50APBF | Vishay |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFB11N50APBF |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 79+ | 1.85 EUR |
| 81+ | 1.74 EUR |
| IRFB11N50APBF |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 3.05 EUR |
| 79+ | 1.79 EUR |
| 81+ | 1.61 EUR |
| IRFB11N50APBF |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 3.13 EUR |
| 63+ | 2.32 EUR |
| 100+ | 2.19 EUR |
| IRFB11N50APBF |
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Hersteller: Vishay Semiconductors
MOSFETs TO220 500V 11A N-CH MOSFET
MOSFETs TO220 500V 11A N-CH MOSFET
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.15 EUR |
| 1000+ | 2.01 EUR |
| 2000+ | 1.56 EUR |
| IRFB11N50APBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.61 EUR |
| 50+ | 2.84 EUR |
| 100+ | 2.57 EUR |
| IRFB11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 507 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.6 EUR |
| 10+ | 9.02 EUR |
| 50+ | 6.79 EUR |
| 100+ | 6.51 EUR |
| 200+ | 6.22 EUR |
| 250+ | 6.12 EUR |
| 500+ | 5.79 EUR |
| IRFB11N50APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB11N50APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)