IRFB13N50APBF Vishay Semiconductors
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.20 EUR |
| 10+ | 5.03 EUR |
| 25+ | 3.63 EUR |
| 100+ | 3.40 EUR |
| 250+ | 3.27 EUR |
| 500+ | 3.01 EUR |
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Technische Details IRFB13N50APBF Vishay Semiconductors
Description: MOSFET N-CH 500V 14A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 8.4A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFB13N50APBF nach Preis ab 3.85 EUR bis 7.48 EUR
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IRFB13N50APBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 14A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 8.4A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB13N50APBF | Hersteller : VISHAY |
Description: VISHAY - IRFB13N50APBF - Leistungs-MOSFET, n-Kanal, 500 V, 14 A, 0.45 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.45ohm |
auf Bestellung 859 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB13N50APBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB |
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IRFB13N50APBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFB13N50APBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRFB13N50APBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFB13N50APBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |