IRFB20N50KPBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 426 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 23+ | 3.13 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFB20N50KPBF VISHAY
Description: MOSFET N-CH 500V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V.
Weitere Produktangebote IRFB20N50KPBF nach Preis ab 2.04 EUR bis 12.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRFB20N50KPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| IRFB20N50KPBF | Hersteller : Vishay |
Транзистор польовий TO220AB N-Ch MOSFET; Uds = 500V; Ids =12A; 280W |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
 |
IRFB20N50KPBF Produktcode: 35981
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller : Vishay |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.21 Ciss, pF/Qg, nC: 2870/110 JHGF: THT |
Produkt ist nicht verfügbar
|
|||||||||||
 |
IRFB20N50KPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRFB20N50KPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRFB20N50KPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRFB20N50KPBF | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT IRFB |
Produkt ist nicht verfügbar |