
IRFB23N15DPBF Infineon Technologies

Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 31931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
337+ | 1.38 EUR |
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Technische Details IRFB23N15DPBF Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V, Power Dissipation (Max): 3.8W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRFB23N15DPBF nach Preis ab 1.57 EUR bis 1.57 EUR
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IRFB23N15DPBF | Hersteller : Infineon Technologies |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB23N15DPBF | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 29556 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB23N15DPBF Produktcode: 161319
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IRFB23N15DPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IRFB23N15DPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFB23N15DPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |