 
IRFB23N15DPBF Infineon Technologies
auf Bestellung 28981 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 351+ | 1.55 EUR | 
| 500+ | 1.34 EUR | 
| 1000+ | 1.19 EUR | 
| 10000+ | 1.02 EUR | 
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Technische Details IRFB23N15DPBF Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V, Power Dissipation (Max): 3.8W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V. 
Weitere Produktangebote IRFB23N15DPBF nach Preis ab 1.19 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IRFB23N15DPBF | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | IRFB23N15DPBF | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - IRFB23N15DPBF - IRFB23N15 12V-300V N-CHANNEL POWER MOSF tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 29556 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||
| IRFB23N15DPBF | Hersteller : International Rectifier HiRel Products |  Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1371 Stücke:Lieferzeit 14-21 Tag (e) | 
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| IRFB23N15DPBF | Hersteller : International Rectifier HiRel Products |  Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 450 Stücke:Lieferzeit 14-21 Tag (e) | 
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| IRFB23N15DPBF Produktcode: 161319 
            
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                Lieblingsprodukt
                 |  Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||
|   | IRFB23N15DPBF | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||
|   | IRFB23N15DPBF | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 150V 23A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||
|   | IRFB23N15DPBF | Hersteller : Infineon Technologies |  MOSFETs MOSFT 150V 23A 90mOhm 37nC | Produkt ist nicht verfügbar | |||||||||
|   | IRFB23N15DPBF | Hersteller : INFINEON TECHNOLOGIES |  Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 23A; 3.8W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 23A Power dissipation: 3.8W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar |