Weitere Produktangebote IRFB23N20DPBF
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IRFB23N20DPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRFB23N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 24A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
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IRFB23N20DPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 200V 24A 100mOhm 57nC |
Produkt ist nicht verfügbar |
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IRFB23N20DPBF | Hersteller : Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
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