IRFB3006GPBF Infineon Technologies
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 4.49 EUR |
| 41+ | 3.75 EUR |
| 61+ | 2.38 EUR |
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Technische Details IRFB3006GPBF Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V.
Weitere Produktangebote IRFB3006GPBF nach Preis ab 2.39 EUR bis 8.16 EUR
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IRFB3006GPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3006GPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB |
auf Bestellung 605 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFB3006GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3006GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IRFB3006GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFB3006GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |