IRFB3206GPBF Infineon Technologies
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 229+ | 0.62 EUR |
| 232+ | 0.59 EUR |
| 236+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFB3206GPBF Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V.
Weitere Produktangebote IRFB3206GPBF nach Preis ab 0.56 EUR bis 5.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRFB3206GPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IRFB3206GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 828 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
 |
IRFB3206GPBF Produktcode: 52938
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||||||||||||
|
|
IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||
| IRFB3206GPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFB3206GPBF - IRFB320 120A, 60V, N-CHANEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
||||||||||||
 |
IRFB3206GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRFB3206GPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 60V 210A 3mOhm 120nC |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IRFB3206GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |