Weitere Produktangebote IRFB3206GPBF nach Preis ab 1.86 EUR bis 3.6 EUR
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IRFB3206GPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3206GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFB3206GPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFB3206GPBF - IRFB320 120A, 60V, N-CHANEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 60V 210A 3mOhm 120nC |
Produkt ist nicht verfügbar |